Effect of ferro electric thickness on Negative Capacitance FET (NCFET). IIUM Engineering Journal, 22 (1). pp. 339-346. ISSN 1511-788X (2021)
Abstract
Conventional Field Effect Transistor (FET) are well known to require at least 60mV/decade at 300K change in the channel potential to change the current by a factor of 10. Due to this, 60mV/decade becomes the bottleneck of this day transistor. A comprehensive study of the Negative Capacitance Field Effect Transistor (NCFET is presented. This paper shows the effect of ferroelectric material in MOSFET structure by replacing the insulator in the conventional MOSFET. It should be possible to obtain a steeper subthreshold swing (SS) compared to the one without a ferroelectric material layer, thus breaking the fundamental limit on the operating voltage of MOSFET.27% of the subthreshold slope reduction is observed by introducing ferroelectric in the dielectric layer compared to the conventional MOSFETs. Hence, the power dissipation in MOSFET can be mitigated and shine to a new technology of a low voltage/low power transistor operation.
| Item Type: | Article |
|---|---|
| Keywords: | NCFETs, Ferroelectric, Subthreshold |
| Taxonomy: | By Subject > College of Engineering > Electrical Engineering > Electronics |
| Local Content Hub: | Subjects > College of Engineering |
| Depositing User: | Eza Eliana Abdul Wahid |
| Date Deposited: | 13 Dec 2022 04:37 |
| Last Modified: | 13 Dec 2022 04:37 |
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